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PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 - 2170 MHz
Description
The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 - 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2
PTFB211501F Package H-37248-2
Single-carrier WCDMA Drive Up
VDD = 30 V, IDQ = 1.20 A, = 2170 MHz 3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz
-25 -30 60 50
Features
* * Broadband internal matching Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF - Average output power = 40 W - Linear Gain = 18 dB - Efficiency = 32% - Adjacent channel power = -34 dBc Typical CW performance, 2170 MHz, 30 V - Output power at P-1dB = 150 W - Efficiency = 55% Integrated ESD protection: Human Body Model, Class 2 (minimum) Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power Pb-Free and RoHS compliant
ACP (dBc)
-35 -40 -45 -50 -55 31 33 35 37 39
Efficiency
40 30
Drain Efficiency (%)
*
ACP Low
20 10
* * *
ACP Up
41 43 45 47 49
0
Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 40 W AVG, = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.5 dB @ 0.01% CCDF
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
17 27 --
Typ
18 32 -34
Max
-- -- -32
Unit
dB % dBc
D
IMD
All published data at TCASE = 25C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 13 Rev. 02, 2009-11-19
PTFB211501E PTFB211501F
RF Characteristics (cont.)
Two-tone Measurement (not subject to production test - verified by design / characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 140 W PEP, = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
-- -- --
Typ
18 40 -30
Max
-- -- --
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 1.6 --
Typ
-- -- -- 0.08 2.1 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 30 V, IDQ = 1.2 A VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70C, 150 W CW)
Symbol
VDSS VGS TJ TSTG RJC
Value
65 -6 to +10 200 -40 to +150 0.29
Unit
V V C C C/W
Ordering Information
Type and Version
PTFB211501E V4
Package Outline
H-36248-2
Package Description
Slotted flange, single-ended Slotted flange, single-ended Earless flange, single-ended Earless flange, single-ended
Shipping
Tray Tape & Reel 250 pcs Tray Tape & Reel 250 pcs
PTFB211501E V4 R250 H-36248-2 PTFB211501F V4 PTFB211501F V4 R250 H-37248-2 H-37248-2
*See Infineon distributor for future availability. Data Sheet 2 of 13 Rev. 02, 2009-11-19
PTFB211501E PTFB211501F
Typical Performance (data taken in production test fixture)
Single-carrier WCDMA, 3GPP Broadband
VDD = 30 V, IDQ = 1.20 A, POUT = 40 W
50 -10
Two-tone Broadband
VDD = 30 V, IDQ = 1.20 A, POUT = 63 W
55
-10 -15
IRL (dB) / ACP Up (dBc)
Gain / Efficiency (dB / %)
IRL
Gain / Efficiency (dB / %)
50 45 40 35 30 25 20
40 35 30 25 20 15 2080
-20 -25
Efficiency IMD3
-20 -25 -30 -35 -40
Efficiency
-30 -35
ACP
Gain
-40 -45 2200
Gain
-45
2100
2120
2140
2160
2180
-50 15 2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Frequency (MHz)
Two-tone Drive-up
VDD = 30 V, IDQ = 1.20 A, 1 = 2170 MHz, 2 = 2169 MHz
19 50 40
-10 -20
Two-tone Drive-up
VDD = 30 V, IDQ = 1.20 A, 1 = 2170 MHz, 2 = 2169 MHz
55
18
Efficiency
45 35
Efficiency (%)
Gain (dB)
17 20 16 10 0 40 42 44 46 48 50 52 54
IMD (dBc)
Gain
30
-30 -40 -50 -60 40 42 44 46 48 50 52 54
IMD3
25 15 5
Efficiency
15
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Data Sheet
3 of 13
Rev. 02, 2009-11-19
Efficiency (%)
Return Loss (dB), IMD (dBc)
45
-15
IRL
PTFB211501E PTFB211501F
Typical Performance (cont.)
Two-tone Drive-up at Selected Frequencies
VDD = 30 V, IDQ = 1.20 A, tone spacing = 1 MHz
-20 2170 MHz 2110 MHz 2140 MHz
Power Sweep, CW Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.20 A, = 2170 MHz
20 19 65 55 45 35
IMD (dBc)
Gain (dB)
18 17 16 15
-40
Gain
-50
Efficiency
25 15
-60 41 43 45 47 49 51 53
41
43
45
47
49
51
53
Output Power, PEP (dBm)
Output Power (dBm)
CW Performance Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.20 A, = 2170 MHz
19 18 60 50 40 30 +25C +85C -10C 46 47 48 49 50 51 52 20 10 42 43 44 45 19
CW Performance Gain vs. Output Power
VDD = 30 V, = 2170 MHz
IDQ = 1.40 A Drain Efficiency (%) Power Gain (dB)
18
Gain (dB)
17 16 15
Gain
IDQ = 1.20 A
17
IDQ = 0.80 A
Efficiency
14
16 41 43 45 47 49 51 53
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 13
Rev. 02, 2009-11-19
Drain Efficiency (%)
-30
PTFB211501E PTFB211501F
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 30 V, IDQ = 1.20 A,
-20
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
1.03
1 = 2170 MHz, 2 = 2169 MHz Normalized Bias Voltage (V) 3rd Order
1.02 1.01 1 0.99 0.98 0.97 -20
-30
2A 4A 8A 10 A 12 A 14 A 16 A
5th
IMD (dBc)
-40
-50
7th
-60 40 45 50 55
0
20
40
60
80
100
Output Power, PEP (dBm)
Case Temperature (C)
Broadband Circuit Impedance
ST
D
0.0
Z Source
Z Load
- WAVE LE NGTH
Z0 = 50
0.1
G S
D LOAD S TOW AR
Z Load
0.1
NGT H
2080 MHz
Frequency
MHz 2200 2170 2140 2110 2080 R
Z Source
jX -8.14 -8.34 -8.53 -8.74 -8.95 R 4.29 4.36 4.45 4.55 4.67
Z Load
jX -4.39 -4.50 -4.61 -4.72 -4.84 1.49 1.52 1.55 1.58 1.62
2200 MHz
<---
ELE WAV
Z Source
0. 2
0. 3
Data Sheet
5 of 13
Rev. 02, 2009-11-19
0.2
PTFB211501E PTFB211501F
Reference Circuit
VGS1 C105 10000000 pF TL108
2 3 1
S2
8
R803 1000 Ohm
1
In NC
Out NC
3 6
C802 1000 pF
4 2 7
5
R802 1200 Ohm
1
C803 1000 pF S1 C801 1000 pF
S3 R 804 1000 Ohm
3
2
C
4
B
S
3
R 102 2000 Ohm TL 112 TL107 R101 5100 Ohm
2 3 1 3 2 1 3 2 1
C106 10000 pF C102 10 pF
1 3 2
R801 1300 Ohm
E
TL111
TL110
TL109
TL101
C104 1000000 pF
C103 10000 pF
TL105 TL102 TL 128 TL 104 TL103
3 2 1
TL 116
TL 115
R103 10 Ohm
TL114
TL 113
TL106
TL 127 RF IN
TL134
1 3 2
TL118
TL133
TL 126
C101 10 pF
TL 124
TL132
TL120
TL131
1 3 2
TL125
TL130
TL122
TL 117 TL 129
3 2 1
b2 1 1 5 0 1 ef v 4 _b d i n _ 1 1- 18 - 2009
TL121 GATE DUT
TL 119 C107 0.4 pF
TL123 C108 0.4 pF
Reference circuit input schematic for = 2170 MHz
TL225
TL222
TL234
1 3 2
TL219
TL237
TL242
TL235
TL241
TL230
1 3 2
TL231
1 3 2
TL228
1 3 2
TL238 VDD1
TL218 TL209 C207 10 pF
C205 20000 pF
C204 1000000 pF
C210 10000000 pF
TL207 DRAIN DUT
TL216
1
2
TL210
3 4
TL202
TL203
TL204
TL201
1 3 2
TL212
TL205
TL213
C202 10 pF
TL214
TL206
TL215 RF OUT
TL211 TL208 C201 1.2 pF C206 20000 pF TL221
3 2 1
C208 10 pF TL217 TL224 TL223 TL233
C203 1000000 pF TL229
3 2 1 2 3 1
b
C209 10000000 pF TL227
211501 ef-v4 _bdout _ 1 1- 18 -2009
TL236
TL220
TL226
TL240
TL232
3 1
TL239 VDD2
2
Reference circuit output schematic for = 2170 MHz Data Sheet 6 of 13 Rev. 02, 2009-11-19
PTFB211501E PTFB211501F
Reference Circuit (cont.)
VDD C802 R801 C105 C106 R102 +
10 F
VDD
S3 R803 R804
C803 +
C801 S2 R802 S1
C207
+
R801 R101 C104 C103
C205 C204
10 F
C102
C210
R103
C107
C101
C108
C201
C202 C209
10 F
C203 C206 C208
PTFB211501 EF
TMM4, .030
(62)
PTFB211501EF
TMM4, .030
b 211501 ef- v1_ C D_ 11
+ VDD
(62)
- 18 - 2 0 0 9
Reference circuit assembly diagram (not to scale)*
* Gerber Files for this circuit available on request Data Sheet 7 of 13 Rev. 02, 2009-11-19
PTFB211501E PTFB211501F
Reference Circuit (cont.)
Circuit Assembly Information
DUT PCB PTFB211501E or PTFB211501F LTN/PTFB211501EF 0.76 mm [.030"] thick, r = 4.5 LDMOS Transistor TMM4 2 oz. copper
Component
Input
C101, C102 C103, C106 C104 C105 C107, C108 C801, C802, C803 R101 R102 R103 R801 R802 R803, R804 S1 S2 S3
Description
Chip capacitor, 10 pF Chip capacitor, 0.01 F Chip capacitor, 1 F Capacitor, 10 F Chip capacitor, 0.4 pF Chip capacitor, 1000 pF Resistor, 5100 Resistor, 2000 Resistor, 10 Resistor, 1300 Resistor, 1200 Resistor, 1000 Transistor Voltage regulator Potentiometer, 2k
Suggested Manufacturer
ATC ATC Digi-Key Digi-Key ATC Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Infineon Technologies National Semiconductor Digi-Key
P/N
100B100JW500X 200B103MW50X 445-1411-2-ND 399-1655-2-ND 100B0R4CW500X PCC1772CT-ND P5.1KECT-ND P2.0KECT-ND P10ECT-ND P1.3KECT-ND P1.2KECT-ND P1.0KECT-ND BCP56 LM7805 3224W-202ECT-ND
Output
C201 C202 C203, C204 C205, C206 C207, C208 C209, C210 Chip capacitor, 1.2 pF Chip capacitor, 10 pF Chip capacitor, 1 F Chip capacitor, 0.02 F Chip capacitor, 10 pF Capacitor, 10 F ATC ATC Digi-Key ATC ATC Garrett Electronics 100B1R2CW500X 100B100JW500X 445-1411-2-ND 200B203MW50X 100B100JW500X TPSE106K050R0400
Data Sheet
8 of 13
Rev. 02, 2009-11-19
PTFB211501E PTFB211501F
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission Line
Input TL101 TL102 TL103 TL104 TL105 TL106, TL128 TL107 TL108 TL109, TL112 TL110, TL111 TL113 TL114, TL115 TL116 TL117 TL118 TL119, TL123 TL120 TL121 TL122 TL124, TL126 TL125 TL127 TL129 TL130 TL131 TL132 TL133 TL134
Electrical Characteristics
0.041 , 40.30 0.033 , 65.15 0.027 , 65.15 0.047 , 65.15 0.000 , 40.30 0.040 , 53.88 0.089 , 20.46 0.021 , 30.35 0.035 , 30.35 0.025 , 65.15 0.012 , 46.07 0.236 , 65.15 0.186 , 50.98 0.000 , 40.30 0.014 , 40.30 0.062 , 6.87 0.020 , 11.38 0.017 , 34.60 0.155 , 40.30 0.127 , 50.98 0.013 , 6.87 0.027 , 40.30
Dimensions: mm
Dimensions: mils
W1 = 2.032, W2 = 2.032, W3 = 3.048 W = 0.889, L = 2.540 W1 = 0.889, W2 = 0.889, W3 = 2.032 W = 0.889, L = 3.556 W = 2.032, L = 0.025 W = 0.889 W1 = 1.270, W2 = 1.270, W3 = 3.048 W1 = 5.080, W2 = 5.080, W3 = 6.350 W = 3.048, L = 1.524 W1 = 3.048, W2 = 3.048, W3 = 2.540 W = 0.889, L = 1.905 W = 1.651, L = 0.889 W = 0.889, L = 18.034 W1 = 10.160, W2 = 17.780 W = 1.397, L = 13.970 W = 2.032, L = 0.025 W = 2.032, L = 1.016 W = 17.780, L = 4.191 W = 10.160, L = 1.397 W = 2.540, L = 1.270 W = 2.032, L = 11.430 W = 1.397, L = 9.525 W1 = 17.780, W2 = 17.780, W3 = 0.889 W1 = 2.032, W2 = 10.160 W1 = 2.032, W2 = 2.032, W3 = 2.032 W1 = 2.540, W2 = 2.032 W1 = 1.397, W2 = 2.540
W1 = 80, W2 = 80, W3 = 120 W = 35, L = 100 W1 = 35, W2 = 35, W3 = 80 W = 35, L = 140 W = 80, L = 1 W = 35 W1 = 50, W2 = 50, W3 = 120 W1 = 200, W2 = 200, W3 = 50 W = 120, L = 60 W1 = 120, W2 = 120, W3 = 100 W = 35, L = 75 W = 65, L = 35 W = 35, L = 710 W1 = 400, W2 = 700 W = 55, L = 550 W = 80, L = 1 W = 80, L = 40 W = 700, L = 165 W = 400, L = 55 W = 100, L = 50 W = 80, L = 450 W = 55, L = 375 W1 = 700, W2 = 700, W3 = 35 W1 = 80, W2 = 400 W1 = 80, W2 = 80, W3 = 80 W1 = 100, W2 = 80 W1 = 55, W2 = 100 W1 = 55, W2 = 55, W3 = 80
0.027 ,50.98
W1 = 1.397, W2 = 1.397, W3 = 2.032
Data Sheet
9 of 13
Rev. 02, 2009-11-19
PTFB211501E PTFB211501F
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission Line
Output
TL201 TL202 (taper) TL203 (taper) TL204 (taper) TL205 TL206 TL207 TL208, TL209 TL210 TL211, TL217, TL218 TL212 TL213, TL214 TL215 TL216 TL219, TL221 TL220, TL242 TL222, TL223 TL224, TL225 TL226, TL235 TL227, TL228 TL229, TL231 TL230, TL232 TL233, TL234 TL236, TL237 TL238, TL239, TL240, TL241
Electrical Characteristics
0.027 , 43.96 0.016 , 4.88 / 5.86 0.058 , 5.86 / 32.33 0.017 , 32.33 / 43.96
Dimensions: mm
Dimensions: mils
W1 = 1.778, W2 = 1.778, W3 = 2.032 W1 = 25.654, W2 = 21.107, L = 1.041 W1 = 21.107, W2 = 2.794, L = 3.937 W1 = 2.794, W2 = 1.778, L = 1.270 W1 = 1.778, W2 = 2.540 W1 = 2.540, W2 = 1.397
W1 = 70, W2 = 70, W3 = 80 W1 = 1010, W2 = 831, L = 41 W1 = 831, W2 = 110, L = 155 W1 = 110, W2 = 70, L = 50 W1 = 70, W2 = 100 W1 = 100, W2 = 55 W = 1010, L = 1 W = 50, L = 265 W = 1010, L = 75 W = 80, L = 1 W = 70, L = 260 W = 100, L = 50 W = 55, L = 1119 W1 = 1010, W2 = 50, W3 = 1010, W4 = 50 W = 50, L = 185 W = 120, L = 185 W = 50, L = 620 W = 50 W1 = 120, W2 = 360 W1 = 360, W2 = 360, W3 = 200 W1 = 360, W2 = 360, W3 = 120 W1 = 360, W2 = 360, W3 = 100 W1 = 50, W2 = 50, W3 = 80 W1 = 50, W2 = 120 W = 360, L = 5
0.000 , 4.88 0.089 , 53.88 0.028 , 4.88 0.000 , 40.30 0.089 , 43.96 0.017 , 34.60 0.378 , 50.98
W = 25.654, L = 0.025 W = 1.270, L = 6.731 W = 25.654, L = 1.905 W = 2.032, L = 0.025 W = 1.778, L = 6.604 W = 2.540, L = 1.270 W = 1.397, L = 28.423 W1 = 25.654, W2 = 1.270, W3 = 25.654, W4 = 1.270
0.062 , 53.88 0.065 , 30.35 0.209 , 53.88
W = 1.270, L = 4.699 W = 3.048, L = 4.699 W = 1.270, L = 15.748 W = 1.270 W1 = 3.048, W2 = 9.144
0.073 , 12.48 0.044 , 12.48 0.037 , 12.48 0.027 , 53.88 0.002 , 12.48
W1 = 9.144, W2 = 9.144, W3 = 5.080 W1 = 9.144, W2 = 9.144, W3 = 3.048 W1 = 9.144, W2 = 9.144, W3 = 2.540 W1 = 1.270, W2 = 1.270, W3 = 2.032 W1 = 1.270, W2 = 3.048, W = 9.144, L = 0.127
Data Sheet
10 of 13
Rev. 02, 2009-11-19
PTFB211501E PTFB211501F
Package Outline Specifications Package H-36248-2
45 X 2.720 [45 X .107]
C L
D S
FLANGE 9.779 LID 9.398+0.100 -0.150 [.385] .370+0.004 19.4310.510 -0.006 [.7650.020]
4.8260.510 [.1900.020]
[
]
C L
G
2X R1.626 [R.064] 4X R1.524 [R.060]
2X 12.700 [.500] 27.940 [1.100] SPH 1.575 [.062]
1.016 [.040]
19.8120.200 [.7800.008]
3.6320.380 0.0381 [.0015] -AC L
C66065-A2322-C001-01-0027_h-36248-2_11-11-09
34.036 [1.340]
Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/-0.025 [0.004 +0.002/-0.001]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max.
Data Sheet
11 of 13
Rev. 02, 2009-11-19
PTFB211501E PTFB211501F
Package Outline Specifications (cont.) Package H-37248-2
[45 X .107] 4X R0.508+.381 -.127 R.020+0.015 -0.005
4.8260.510 [.1900.020]
D
[
]
LID 9.398+0.100 -0.150 FLANGE 9.779 .370+0.004 -0.006 [.385]
[
]
19.4310.510 [.7650.020]
G
2X 12.700 [.500]
SPH 1.575 [.062]
19.8120.200 [.7800.008] 1.016 [.040]
0.0381 [.0015] -AC L
C66065-A2323-C001-01-0027_h-37248-2_11-11-09
3.6320.380 [.1430.015]
S
20.574 [.810]
Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/-0.025 [0.004 +0.002/-0.001]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 12 of 13 Rev. 02, 2009-11-19

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